Nitrogen doping in hydrogenated amorphous silicon

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Abstract
The doping effect of N in hydrogenated amorphous silicon (a-Si:H) is studied. The absence of a thickness dependence of the conductivity of N-doped samples provides convincing evidence that the doping effect of N in a-Si:H is a bulk property. The similarity between the effect of N doping and that of P doping found in the conductivity and the photoconductivity decay indicates that N can act as an effective donor in a-Si:H and that N doping is also of substitutional type; however, the solid-phase doping efficiency of N is estimated to be at least three orders of magnitude lower than that of P.