SEM-EBIC studies of boron implanted silicon
- 1 March 1980
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 118 (3) , 337-342
- https://doi.org/10.1111/j.1365-2818.1980.tb00282.x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Advances in the electrical assessment of semiconductors using the scanning electron microscopeJournal of Microscopy, 1980
- SEM observation of dislocations in boron implanted silicon using schottky barrier EBIC techniquePhysica Status Solidi (a), 1978
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972
- Penetration and energy-loss theory of electrons in solid targetsJournal of Physics D: Applied Physics, 1972