Multilevel metallization for large area point-contact solar cells
- 1 January 1988
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 532-537 vol.1
- https://doi.org/10.1109/pvsc.1988.105759
Abstract
An analysis of the series resistances of different metallization schemes for large-area backside-contact (BC) solar cells is presented. The need for developing a multilevel metallization technology for such cells is demonstrated. The authors propose a new design for the metallization of BC cells that present a series resistance independent of the cell size. The particular features required for such a multilevel interconnection are studied, and a process using anodic oxidation of aluminum is presented. BC silicon solar cells of 0.64 cm/sup 2/ have been processed in this technology, resulting in 26.2% efficiencies at 10 W/cm/sup 2/ (100 suns AM1.5, 25.5 degrees C). Subsequent runs with a simplified process and a new cell design have given 27.3% efficiency cells. The cells have been soldered on alumina mounts. Results of thermal cycling are given.Keywords
This publication has 8 references indexed in Scilit:
- High Efficiency Large Area Back Contact Concentrator Solar Cells with a Multilevel InterconnectionInternational Journal of Sustainable Energy, 1988
- Increased photogeneration in thin silicon concentrator solar cellsIEEE Electron Device Letters, 1987
- 27.5-percent silicon concentrator solar cellsIEEE Electron Device Letters, 1986
- The limiting efficiency of silicon solar cells under concentrated sunlightIEEE Transactions on Electron Devices, 1986
- Point-contact silicon solar cellsIEEE Transactions on Electron Devices, 1984
- Metallization in microelectronicsThin Solid Films, 1977
- Evolution and Current Status of Aluminum MetallizationJournal of the Electrochemical Society, 1976
- Processes for multilevel metallizationJournal of Vacuum Science and Technology, 1974