Oxygen and Carbon Defect Characterization In Silicon by Sims
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Direct evidence for co-aggregation of carbon and oxygen in Czochralski siliconApplied Physics Letters, 1985
- Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystalsApplied Physics Letters, 1985
- A Comparison of Camera-Based and Quantized Detectors for Image Processing on an Ion MicroscopePublished by Springer Nature ,1984