P-type PtSi Schottky-diode barrier height determined from I–V measurement
- 30 June 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (6) , 475-478
- https://doi.org/10.1016/0038-1101(89)90029-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Optimization of the cavity for silicide Schottky infrared detectorsSolid-State Electronics, 1989
- Variation of the effective Richardson constant of Pt-Si Schottky diode due to annealing treatmentApplied Physics Letters, 1985
- A review of the theory, technology and applications of metal-semiconductor rectifiersThin Solid Films, 1978
- Control of Schottky barrier height using highly doped surface layersSolid-State Electronics, 1976