Electrical characteristics of GaAs LPE schottky diodes
- 1 January 1983
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (11) , 1451-1456
- https://doi.org/10.1002/crat.2170181131
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Study of microplasma breakdown in schottky barrier diodes by means of a modulation methodSolid-State Electronics, 1980
- Structure defects investigation of GaAs and AlxGa1−xAs epitaxial layersCrystal Research and Technology, 1980
- 20-GHz high-power GaAs DDR-IMPATT diodes with a p+-p-n-n+structureProceedings of the IEEE, 1974
- X-band GaAs double-drift IMPATT devicesProceedings of the IEEE, 1973
- Measurement System for Derivative StudiesReview of Scientific Instruments, 1972
- Millimeter-wave GaAs Schottky-barrier IMPATT diodesProceedings of the IEEE, 1972