Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 5 0, 1533 (1987)]
- 25 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (21) , 1534
- https://doi.org/10.1063/1.97772
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Compensation in epitaxial cubic SiC filmsApplied Physics Letters, 1986
- Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor depositionApplied Physics Letters, 1986