Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition
- 25 August 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (8) , 450-452
- https://doi.org/10.1063/1.97112
Abstract
Electrical properties of non‐doped and nitrogen‐doped n‐type β‐SiC films grown on Si substrates have been investigated at 70–1000 K. Those of non‐doped films remarkably depend on the Si/C ratio of the source gases. The highest mobilities of non‐doped films are 510 and 1330 cm2 V−1 s−1 at 296 and 71 K, respectively. The carrier concentrations are as low as 6×1016 cm−3 even at 1000 K. Ionization energies of 34 –37 meV for nitrogen donors and 19–25 meV for unknown donors of non‐doped films are obtained. Mobilities of both non‐doped and nitrogen‐doped films are dominated by lattice scattering at high temperatures and by impurity scattering at low temperatures. Nitrogen donors strongly affect the impurity scattering.Keywords
This publication has 8 references indexed in Scilit:
- 3C-SiC p-n junction diodesApplied Physics Letters, 1986
- Electron cyclotron resonance in cubic SiCSolid State Communications, 1985
- Schottky barrier diodes on 3C-SiCApplied Physics Letters, 1985
- Epitaxial growth of β-SiC single crystals by successive two-step CVDJournal of Crystal Growth, 1984
- High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor depositionApplied Physics Letters, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Free-to-bound transition in β-SiC doped with boronPhysica Status Solidi (a), 1975
- Hall Effect Studies of Doped Zinc Oxide Single CrystalsPhysical Review B, 1957