122 GHz low-noise-amplifier in sige technology
- 1 September 2009
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 19308833,p. 316-319
- https://doi.org/10.1109/esscirc.2009.5325945
Abstract
The paper presents two types of 122 GHz low-noise-amplifiers (LNA) fabricated in SiGe BiCMOS technology. The amplifier design takes advantage of a novel transmission line structure with thick metal ground-shield on top of the MMIC. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifiers are designed for high gain, minimum noise figure and low power consumption. Measurements show a gain of 13.5 dB and a noise figure of 9.6 dB at 122 GHz. The power consumption is 52 mW from a 3.5 Volt supply. The other version of the LNA with transformer coupling to the output instead of capacitive coupling has slightly lower gain. The amplifier is intended for the use in ISM-band radar and communication systems, wide-band communication systems and in radar imaging systems.Keywords
This publication has 3 references indexed in Scilit:
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