A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology
- 13 December 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10889299,p. 14-17
- https://doi.org/10.1109/bipol.2005.1555191
Abstract
This paper presents a SiGe differential low-noise amplifier (LNA) for the V-band. The measured gain at 60 GHz is 18 dB, and the input return loss is below -15 dB. The 3-dB bandwidth is from 49 GHz to 71 GHz. Measured and simulated S-parameters agree well over the whole range. The LNA draws 30 mA from a 2.2 V supply. It facilitates the design of a fully integrated WLAN receiver in the 57-64 GHz band.Keywords
This publication has 6 references indexed in Scilit:
- A fully integrated BiCMOS PLL for 60 GHz wireless applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- SiGe bipolar transceiver circuits operating at 60 GHzIEEE Journal of Solid-State Circuits, 2005
- 60 GHz transceiver circuits in SiGe:C BiCMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Performance and design considerations for high speed SiGe HBTs of f/sub T//f/sub max/=375 GHz/210 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Novel collector design for high-speed SiGe:C HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Physical modeling of spiral inductors on siliconIEEE Transactions on Electron Devices, 2000