Universal relation between electron channeling line intensity and thickness of disordered layers on single crystals
- 17 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (16) , 1486-1488
- https://doi.org/10.1063/1.99973
Abstract
Electron channeling patterns (ECP’s) were measured for Si and GaAs single crystals with thin polycrystal films or ion‐damaged layers on the top surfaces. The intensity scans along channeling lines provide quantitative information on the above disordered layer thickness. We have derived a universal relation between the channeling line intensity and disordered layer thickness. This scaling law is independent of channeling planes and species of the single crystals and disordered layers.Keywords
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