Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6A) , L980
- https://doi.org/10.1143/jjap.26.l980
Abstract
The effect of an undoped spacer layer up to 300 A thick adjoining a triple-barrier diode is studied. Larger peak-to-valley ratios and smaller full-widths at half maximum (FWHM), compared to conventional triple-barrier diodes, are obtained for the resonant current-peaks in these samples. It is explained that a main cause of the peak broadening is the random distribution of silicon ions in the heavily doped layer adjoining the barrier.Keywords
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