Direct measurement of strain in a Ge island on Si(001)
- 5 July 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (1) , 46-48
- https://doi.org/10.1063/1.124272
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Evolution of Ge islands on Si(001) during annealingJournal of Applied Physics, 1999
- Imaging the Elastic Nanostructure of Ge Islands by Ultrasonic Force MicroscopyPhysical Review Letters, 1998
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- SiGe Coherent Islanding and Stress Relaxation in the High Mobility RegimePhysical Review Letters, 1997
- Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopyJournal of Applied Physics, 1996
- Elastic misfit stress relaxation in highly strained InGaAs/GaAs structuresApplied Physics Letters, 1994
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Foil thickness measurements from convergent-beam diffraction patternsPhilosophical Magazine A, 1981
- Diffraction contrast from spherically symmetrical coherency strainsPhilosophical Magazine, 1963