Optical properties of metallic films for vertical-cavity optoelectronic devices
- 1 August 1998
- journal article
- research article
- Published by Optica Publishing Group in Applied Optics
- Vol. 37 (22) , 5271-5283
- https://doi.org/10.1364/ao.37.005271
Abstract
We present models for the optical functions of 11 metals used as mirrors and contacts in optoelectronic and optical devices: noble metals (Ag, Au, Cu), aluminum, beryllium, and transition metals (Cr, Ni, Pd, Pt, Ti, W). We used two simple phenomenological models, the Lorentz–Drude (LD) and the Brendel–Bormann (BB), to interpret both the free-electron and the interband parts of the dielectric response of metals in a wide spectral range from 0.1 to 6 eV. Our results show that the BB model was needed to describe appropriately the interband absorption in noble metals, while for Al, Be, and the transition metals both models exhibit good agreement with the experimental data. A comparison with measurements on surface normal structures confirmed that the reflectance and the phase change on reflection from semiconductor–metal interfaces (including the case of metallic multilayers) can be accurately described by use of the proposed models for the optical functions of metallic films and the matrix method for multilayer calculations.Keywords
This publication has 56 references indexed in Scilit:
- Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire maskSemiconductor Science and Technology, 1996
- Theoretical and Experimental Estimations of Photon Recycling Effect in Light Emitting Devices with a Metal MirrorJapanese Journal of Applied Physics, 1996
- Metallization to asymmetric cladding separate confinement heterostructure lasersApplied Physics Letters, 1995
- 3.2 μm infrared resonant cavity light emitting diodeApplied Physics Letters, 1995
- Contact reflectivity effects on thin p-clad InGaAs single quantum-well lasersIEEE Photonics Technology Letters, 1994
- Increased fiber communications bandwidth from a resonant cavity light emitting diode emitting at λ=940 nmApplied Physics Letters, 1993
- Surface emitting lasersOptical and Quantum Electronics, 1992
- Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasersIEEE Journal of Quantum Electronics, 1991
- InGaAs vertical-cavity surface-emitting lasersIEEE Journal of Quantum Electronics, 1991
- Distributed feedback coupling coefficient in diode lasers with metallized gratingsIEEE Photonics Technology Letters, 1990