Chemical Manipulation of High-TCFerromagnetism in ZnO Diluted Magnetic Semiconductors

Abstract
We report the use of targeted p- and n-type chemical perturbations to manipulate high-TC ferromagnetism in Mn2+ZnO and Co2+ZnO in predictable and reproducible ways. We demonstrate a clear correlation between nitrogen and high-TC ferromagnetism for Mn2+ZnO and an inverse correlation for Co2+ZnO, both as predicted by recent theoretical models. These chemical perturbations reveal rich possibilities for exerting external control over high-TC spin ordering in diluted magnetic semiconductors.