Athermal annealing of structure damage in GaAs
- 16 August 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 60 (2) , 557-564
- https://doi.org/10.1002/pssa.2210600227
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Two types of defect clusters in GaAsRadiation Effects, 1979
- Recombination-enhanced defect reactions strong new evidence for an old concept in semiconductorsAdvances in Physics, 1977
- Theory of recombination-enhanced defect reactions in semiconductorsPhysical Review B, 1975
- A photoluminescence study of defects in non-stoichiometric gallium arsenide using concurrent electrical and structural characterizationJournal of Materials Science, 1974
- Luminescence in Intrinsic and Annealed Electron-Irradiated GaAs:CdPhysical Review B, 1969