Light scattering of InSb at high temperatures

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Abstract
Raman scattering measurements in the small-gap semiconductor InSb show that the splitting between longitudinal and transverse long-wavelength optical phonons is drastically reduced and eventually disappears at temperatures approaching the melting point. These observations are attributed to screening of the long-range forces by free carriers, whose presence dominates as the fundamental energy gap diminishes near the melting point, and to contributions due to momentum nonconservation and lattice anharmonicity. Preliminary results on other III-V semiconductors are also discussed.