Electronic structure of strained layer SiGexSi1−x superlattices from tight binding theory
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (4-5) , 511-513
- https://doi.org/10.1016/0749-6036(88)90228-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986
- Minimal basis sets in the linear muffin-tin orbital method: Application to the diamond-structure crystals C, Si, and GePhysical Review B, 1986
- Electronic structure of and strained layer superlatticesSuperlattices and Microstructures, 1986
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- New semiempirical construction of the Slater-Koster parameters for group-IV semiconductorsPhysical Review B, 1983