Theory of hopping transport of holes in amorphous SiO2
- 15 May 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (10) , 5248-5255
- https://doi.org/10.1063/1.359276
Abstract
A quantum‐mechanical theory of hole transport in SiO2 is developed based on modeling of the oxide as an array of time‐dependent δ‐function potential well distribution. Holes undergo a variable range hopping transport which is dispersive in nature. The oxide, being an insulator, involves a maximum cutoff phonon frequency of 1014–1015 s−1. The Schrödinger equation is solved along with the Poisson equation using a piecewise linear internal field. The theory is applied to metal‐oxide‐semiconductor structures subjected to a short radiation pulse.This publication has 7 references indexed in Scilit:
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