Raman scattering in Ga0.47In0.53As/InP superlattices grown by metalorganic vapor phase epitaxy
- 7 September 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (10) , 758-760
- https://doi.org/10.1063/1.98858
Abstract
Raman scattering in two Ga0.47In0.53As/InP superlattices is reported. Scattering by folded longitudinal acoustic phonons has been observed and interpreted using the elastic continuum theory. The data yield superlattice periods of 18.0 and 12.1 nm. The optical phonon energies are observed to be different from bulk values.Keywords
This publication has 13 references indexed in Scilit:
- Low loss InGaAs/InP multiple quantum well waveguidesApplied Physics Letters, 1986
- Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasersApplied Physics Letters, 1986
- Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxyApplied Physics Letters, 1986
- Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxyApplied Physics Letters, 1986
- GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1985
- Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPEElectronics Letters, 1985
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Light scattering from vibrational modes insuperlattices and related alloysPhysical Review B, 1983
- Observation of Folded Acoustic Phonons in a Semiconductor SuperlatticePhysical Review Letters, 1980