Comparison of trimethylgallium and triethylgallium for the growth of GaN
Open Access
- 1 December 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (22) , 3272-3274
- https://doi.org/10.1063/1.120310
Abstract
GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction, Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.Keywords
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