ELECTRON TUNNELING INTO AMORPHOUS GERMANIUM
- 1 February 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (3) , 87-89
- https://doi.org/10.1063/1.1653131
Abstract
Al–Al2O3–Ge tunnel junctions were prepared to study electron tunneling into amorphous germanium films. An almost symmetric conductance minimum centered at zero bias without additional structure was observed. The change in conductance from 1V to zero bias is 103 at 78°K and about 102 at 300°K. The zero bias conductance is 102 times lower at 78°K than at 300°K. The results indicate a large density of states in the gap or near the surface.Keywords
This publication has 8 references indexed in Scilit:
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969
- Simple Band Model for Amorphous Semiconducting AlloysPhysical Review Letters, 1969
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969
- TUNNELING INTO AMORPHOUS GERMANIUM FILMSApplied Physics Letters, 1968
- Electrical conduction in amorphous germaniumThin Solid Films, 1968
- Electrical and Optical Properties of Amorphous GermaniumPhysical Review B, 1967
- Electrons in disordered structuresAdvances in Physics, 1967
- Thermoelectric Power in Amorphous GermaniumPhysica Status Solidi (b), 1966