Rapid Diffusion of Molybdenum Trace Contamination in Silicon
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Molybdenum contamination has been detected in silicon epitaxial layers and substrate wafers after processing in any one of several epitaxial silicon reactors. Greatly reduced minority carrier diffusion lengths and lifetimes are consistent with Mo concentrations measured by DLTS in the 1012 and 1013 cm−3 ranges. Depth profiling of diffusion length and the Mo deep level show much greater penetration than expected from previous reports of Mo as a slow diffuser. The data indicate a lower limit of 10−8 cm2/sec for the diffusion coefficient of Mo in silicon at 1200°C, consistent with high diffusivities measured for other transition metals.Keywords
This publication has 8 references indexed in Scilit:
- Transition metals in siliconApplied Physics A, 1983
- Diffusion length measurement and silicon qualitySolar Cells, 1982
- Capacitance Transient Spectroscopy of Trace Contamination in SiliconJournal of the Electrochemical Society, 1982
- A Neutron Activation Analysis Study of the Sources of Transition Group Metal Contamination in the Silicon Device Manufacturing ProcessJournal of the Electrochemical Society, 1981
- The impact of molybdenum on silicon and silicon solar cell performanceSolid-State Electronics, 1980
- Energy Levels in SiliconAnnual Review of Materials Science, 1980
- Diffusion lengths in solar cells from short-circuit current measurementsApplied Physics Letters, 1977
- Physics of Semiconductor DevicesPhysics Today, 1970