Centres de recombinaison introduits dans le germanium par des electrons de 2 MeV
- 1 January 1959
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 8, 153-157
- https://doi.org/10.1016/0022-3697(59)90303-8
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Transient Recombination of Excess Carriers in SemiconductorsPhysical Review B, 1958
- Effect of Irradiation on the Hole Lifetime of N-Type GermaniumJournal of Applied Physics, 1957
- Diffusion-Limited Annealing of Radiation Damage in GermaniumPhysical Review B, 1957
- Energy Levels in Electron-Bombarded SiliconPhysical Review B, 1957
- Carrier Lifetime in Semiconductors for Transient ConditionsPhysical Review B, 1957
- Measurement of Short Carrier LifetimesReview of Scientific Instruments, 1956
- Electron Voltaic Study of Electron Bombardment Damage and its Thresholds in Ge and SiPhysical Review B, 1955
- Annealing of Bombardment Damage in a Diamond-Type Lattice: TheoreticalPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952