Ellipsometric study of boron nitride thin-film growth on Si(100)
- 12 April 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (15) , 1760-1762
- https://doi.org/10.1063/1.109599
Abstract
Variable angle spectroscopicellipsometry over the photon energy (E) range 1.5≤E≤5.5 eV has been used to study the structure and optical properties of thin (<400 Å) laser‐deposited boron nitride filmsgrown on Si(100). The data are interpreted to indicate that initially the filmgrows next to the substrate in the cubic phase, followed by a reasonably sharp transition after 50–100 Å of film growth to an amorphous phase.Keywords
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