Electron irradiation dilatation in SiO2
- 15 November 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (10) , 541-542
- https://doi.org/10.1063/1.1654741
Abstract
Negative dilatation (shrinkage) induced by 10‐keV electron bombardment of SiO2 films thermally grown on Si has been studied. Measured deflection changes in continuous SiO2 bridges etched following irradiation showed a maximum shrinkage of [inverted lazy s] 0.8%, which occurred at 0.2 C/cm2, followed by a slight expansion, and subsequent saturation at higher exposures. Exposures up to 3 C/cm2 were utilized. Isochronal annealing studies show the activation energy for recovery to be approximately 1 eV with 2% recovery occurring in 1 h at 400°C.Keywords
This publication has 9 references indexed in Scilit:
- Investigation of static electron irradiation effects in bulk Si and thin Si films at energies far below thresholdJournal of Applied Physics, 1972
- Local Stress Measurement in Thin Thermal SiO2 Films on Si SubstratesJournal of Applied Physics, 1972
- The Radiation Compaction of Vitreous SilicaJournal of Applied Physics, 1968
- Fabrication of planar silicon transistors without photoresistSolid-State Electronics, 1968
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- Radiation effects in fused silica and α-Al2O3Discussions of the Faraday Society, 1961
- Lattice Displacements by Fast ElectronsJournal of Applied Physics, 1960
- Radiation Effects in Silica at Low TemperaturesPhysical Review B, 1959
- Radiation Damage in Vitreous Silica: Annealing of the Density ChangesPhysical Review B, 1956