Pseudomorphic InGaAs base ballistic hot-electron device
- 14 November 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (20) , 1946-1948
- https://doi.org/10.1063/1.100331
Abstract
We report the first successful incorporation of a pseudomorphic InGaAs base in a ballistic hot‐electron device. The device, with a 28‐nm‐thick In0.15Ga0.85As base, had a collector‐base breakdown voltage of 0.55 V and a maximum current transfer ratio of 0.89 at 4.2 K, considerably higher than the 0.75 in a comparable GaAs‐base device. Electron energy spectroscopy measurements revealed that at least 30% of the injected electrons traversed the InGaAs base ballistically, causing a strong modulation in the injected currents into the quantized base. The Γ‐L valley separation in the strained In0.15Ga0.85As was estimated to be about 410 meV.Keywords
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