Room temperature observation of velocity overshoot in silicon inversion layers
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Measurement of Electron and Hole Saturation Velocities in Silicon Inversion Layers Using Soi MosfetsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- An investigation of steady-state velocity overshoot in siliconSolid-State Electronics, 1985
- Relation of drift velocity to low-field mobility and high-field saturation velocityJournal of Applied Physics, 1980
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970