Variable-range hopping in compensated epitactic n-InP
- 10 November 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (31) , L1007-L1010
- https://doi.org/10.1088/0022-3719/18/31/006
Abstract
The authors low-temperature data for variable-range-hopping conductivity in lightly doped, compensated n-InP gives: sigma = sigma 0 exp(-(T0/T)s) with 0.21<s<0.28. This indicates that the corresponding Mott law for this conductivity mechanism, now established for two-dimensional structures is also an adequate description for three-dimensional systems.Keywords
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