Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substrates

We have studied the optical properties of (InGa)As self-assembled quantum dots grown on $\text{(311)B}$ -oriented GaAs substrates. The luminescence linewidth is considerably narrower than that of similar samples grown on (100). The difference is explained in terms of the in-plane coupling of dots which is more significant in $\text{(311)B.}$ In order to assess the device potential of $\text{(311)B}$ (InGa)As dots, we have studied the properties of edge emitting lasers by extending the well-known technology for (100) to the $\text{(311)B}$ devices.