Sensitivity Characteristics of Positive and Negative Resists at 200 kV Electron-Beam Lithography
- 24 December 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (1L) , L95
- https://doi.org/10.1143/jjap.44.l95
Abstract
The contrast curve of positive and negative electron-beam resists such as polymethylmethacrylate (PMMA), ZEP520A, and hydrogen silsesquioxane (HSQ) at 200 kV electron-beam was estimated by using continuous slow down approximation (CSDA) model with both non-relativistic and relativistic Bethe stopping power. Experimental results show that simple CSDA model well explains the overall response of these various electron-beam resists to high energy electron-beam only if we use the relativistic Bethe stopping power. The difference between non-relativistic and relativistic Bethe stopping power is discussed.Keywords
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