High-power InGaAs-GaAs strained quantum well lasers with InGaP cladding layers on p-type GaAs substrates
- 1 October 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (7) , 3212-3214
- https://doi.org/10.1063/1.351437
Abstract
We report device results from channel guide InGaAs‐GaAs strained quantum well lasers with In0.49Ga0.51P cladding layers (λ L = 980 nm). Channel guide lasers are demonstrated with a new current blocking scheme using a p‐n‐pInGaP junction on a p +‐GaAs substrate. The laser structure is grown by metalorganic vapor phase epitaxy on the channeled n‐InGaP layer. The reverse biased p‐n‐pInGaP junction is shown to be effective in preserving the current blocking properties for InGaAs‐GaAs‐InGaP lasers. The uncoated lasers show cw laser thresholds of 11 mA at RT and high output powers of 125 mW.This publication has 10 references indexed in Scilit:
- High power 1.017-μm strained-layer quantum well lasers grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1992
- Empirical fit to band discontinuities and barrier heights in III–V alloy systemsApplied Physics Letters, 1992
- Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1992
- Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructureApplied Physics Letters, 1992
- Self-aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas-source molecular beam epitaxy with two growth stepsApplied Physics Letters, 1991
- Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfacesApplied Physics Letters, 1989
- Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasersIEEE Journal of Quantum Electronics, 1988
- Thermal conductivity of binary, ternary, and quaternary III-V compoundsJournal of Applied Physics, 1988
- High power output, low threshold, inner stripe GaInAsP laser diode on a p-type InP substrateApplied Physics Letters, 1984
- High power output InGaAsP/InP buried heterostructure lasersElectronics Letters, 1981