Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition

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Abstract
Polycrystalline SrBi 2 Ta 2 O 9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO 2 / Si substrates by metalorganic decomposition. Electric measurements demonstrate that fatigue increases with decreasing switching voltage and frequency, and the suppressed polarization caused at a lower switching voltage can be recovered by switching at a higher voltage. This suggests that the domain walls of SBT thin films are weakly pinned and easily depinned by a higher external field. The polarization of SBT thin filmsannealed in air shows more degradation than that annealed in oxygen, which indicates that the oxygen vacancy also plays an important role in fatigue behavior of SBT thin films.