Microstructure of the a-Si1-xCx:H/c-Si Interface
- 1 January 1989
- book chapter
- Published by Springer Nature in Springer Proceedings in Physics
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silaneApplied Physics Letters, 1987
- Preparation and Electrical Properties of An Amorphous SiC/Crystalline Si P+n HeterostructureJapanese Journal of Applied Physics, 1984
- Amorphous/crystalline heterostructure as a novel approach to fabrication of a solar cellElectronics Letters, 1984