Very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH4-PH3-H2 Reactants for Bipolar Devices
- 1 April 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (4A) , L493
- https://doi.org/10.1143/jjap.27.l493
Abstract
A novel plasma-CVD process has been developed for growing specular silicon epitaxial layers at very low temperatures of approximately 200°C. The epitaxial layers were deposited from SiH4-PH3 gases diluted with H2 on single-crystal substrates just after being etched in a HF dip. The highest electron mobility and lowest resistivity of the n+-layers were 30 cm2/V ·s and 4×10-4 Ω·cm, respectively. This technology has been successfully applied to fabricate bipolar transistors with a high current gain of 370.Keywords
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