InP-based 1.5 µm vertical cavity surface emittinglaser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors
- 25 June 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (13) , 1316-1318
- https://doi.org/10.1049/el:19980919
Abstract
Room temperature pulsed operation of a novel 1.5 µm vertical cavity surface emitting laser is reported. A GaAs/Al0.95Ga0.05As heterostructure is grown directly on the patterned InGaAsP/InP quantum well active region. Selective lateral oxidation of a lattice matched In0.52Al0.48As layer is used for current confinement and, to create the top AlxOy/GaAs distributed Bragg reflector. The minimum threshold current is 12 mA.Keywords
This publication has 8 references indexed in Scilit:
- Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applicationsApplied Physics Letters, 1998
- Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structuresApplied Physics Letters, 1997
- 64°C continuous-wave operation of 1.5-μm vertical-cavity laserIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1997
- 1.55 µm vertical-cavity surface-emitting laserswith wafer-fused InGaAsP/InP-GaAs/AlAs DBRsElectronics Letters, 1996
- Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasersIEEE Photonics Technology Letters, 1995
- Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectorsIEEE Photonics Technology Letters, 1995
- Hydrolyzation oxidation of AlxGa1−xAs-AlAs-GaAs quantum well heterostructures and superlatticesApplied Physics Letters, 1990