A 0.8-μm BiCMOS technology for ASIC applications
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- CBIC-V, a new very high speed complementary silicon bipolar IC processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Epitaxially grown base transistor for high-speed operationIEEE Electron Device Letters, 1987
- A high performance submicron CMOS process with self-aligned chan-stop and punch-through implants (Twin-Tub V)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986