The Poole-Frenkel effect in 6H-SiC diode characteristics
- 1 April 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (4) , 587-591
- https://doi.org/10.1109/16.278514
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- A new recombination model for device simulation including tunnelingIEEE Transactions on Electron Devices, 1992
- Electrical properties of ion-implanted p-n junction diodes in β-SiCJournal of Applied Physics, 1988
- Epitaxial growth and electric characteristics of cubic SiC on siliconJournal of Applied Physics, 1987
- Non-ideal base current in bipolar transistors at low temperaturesIEEE Transactions on Electron Devices, 1987
- 3C-SiC p-n junction diodesApplied Physics Letters, 1986
- Electric field effect on the thermal emission of traps in semiconductor junctionsJournal of Applied Physics, 1979
- Preparation and properties of vapour phase epitaxial silicon carbide diodesSolid-State Electronics, 1972
- ion-implanted junctions and conducting layers in SiCRadiation Effects, 1970
- DIODES IN SILICON CARBIDE BY ION IMPLANTATIONApplied Physics Letters, 1969
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938