Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
- 5 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (18) , 2422-2424
- https://doi.org/10.1063/1.118891
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Weak localization in back-gated Si/quantum-well wires fabricated by reactive ion etchingPhysical Review B, 1996
- Tight-binding study of interaction time in molecular switchesPhysical Review B, 1996
- Resonant tunneling through two impurities in disordered barriersPhysical Review B, 1995
- Extremely high electron mobility in Si/SiGe modulation-doped heterostructuresApplied Physics Letters, 1995
- Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructuresApplied Physics Letters, 1995
- Hot ballistic transport and phonon emission in a two-dimensional electron gasPhysical Review Letters, 1989
- Point-contact spectroscopy of electron relaxation mechanisms in semiconductorsPhysics Letters A, 1983
- Review of experimental aspects of hot electron transport in MOS structuresSolid-State Electronics, 1978
- Electron drift velocity in siliconPhysical Review B, 1975
- Differential Negative Resistance of n-Type Inversion Layer in Silicon MOS Field-Effect TransistorApplied Physics Letters, 1972