Five-level k · p model for conduction electrons in GaAs. Description of cyclotron resonance experiments
- 31 March 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 53 (9) , 777-782
- https://doi.org/10.1016/0038-1098(85)90218-2
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Nonparabolicity and warping in the conduction band of GaAsSolid State Communications, 1984
- Resonant polaron coupling of the n = 1 Landau level and the 2p+ donor state in GaAsSolid State Communications, 1983
- perturbation theory in III-V compounds and alloys: a reexaminationPhysical Review B, 1977
- Optical detection of conduction-electron spin resonance in GaAs, , andPhysical Review B, 1977
- An investigation of the anisotropy of the valence band of GaAs by cyclotron resonanceJournal of Physics C: Solid State Physics, 1976
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973
- Resolved Free-Exciton Transitions in the Optical-Absorption Spectrum of GaAsPhysical Review B, 1972
- Zeeman spectra of the principal bound exciton in Sn-doped gallium arsenideSolid State Communications, 1972
- Precision verification of effective mass theory for shallow donors in GaAsSolid State Communications, 1971
- Valence Bands of Germanium and Silicon in an External Magnetic FieldPhysical Review B, 1962