A 19% efficient AlGaAs solar cell with graded band gap
- 15 December 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (12) , 1319-1321
- https://doi.org/10.1063/1.96266
Abstract
An Al0.20Ga0.80As solar cell with a band gap graded from 1.64 eV at the junction to 1.72 eV at the surface has been fabricated using metalorganic chemical vapor deposition. An efficiency of 19.2% has been measured under 1-sun, AM2 simulated conditions with an open circuit voltage of 1.18 V, a short circuit density of 14.5 mA/cm2, and a fill factor of 0.83.Keywords
This publication has 2 references indexed in Scilit:
- Efficient AlGaAs shallow-homojunction solar cellsApplied Physics Letters, 1984
- A three-terminal double junction GaAs/GaAlAs cascade solar cellIEEE Electron Device Letters, 1983