Efficient AlGaAs shallow-homojunction solar cells
- 15 March 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (6) , 632-634
- https://doi.org/10.1063/1.94859
Abstract
Shallow-homojunction n+/p/p+ solar cells with one-sun, AM1 conversion efficiencies as high as 12.9% have been fabricated in Al0.2Ga0.8As epitaxial layers grown by organometallic chemical vapor deposition on single-crystal GaAs substrates. For these cells, which have n+ layers thinned by anodic oxidation to about 500 Å, the quantum efficiencies in the short-wavelength portion of the spectrum are as high as the best reported for AlGaAs cells with high band-gap window layers.Keywords
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