Self-selective formation of organic masks for methane/hydrogen reactive ion etching of InP
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Anisotropic reactive ion etching of InP in methane/hydrogen based plasmasJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropyJournal of Vacuum Science & Technology B, 1989