Ultrafast switching characteristics of a bistable surface-emitting multiple quantum well distributed Bragg reflector laser
- 21 March 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (12) , 942-944
- https://doi.org/10.1063/1.99235
Abstract
We describe an ultrafast switching operation of a bistable surface-emitting distributed Bragg reflector laser. The rise time was as small as 12 ps and the fall time was 90 ps. Both are much smaller than those of conventional bistable laser diodes. Ths was realized by the effect of the multiple quantum well structure and a strong detuning.Keywords
This publication has 10 references indexed in Scilit:
- Continuous wave operation of a surface-emitting AlGaAs/GaAs multiquantum well distributed Bragg reflector laserApplied Physics Letters, 1987
- Analysis of multiple-quantum-well distributed feedback laserElectronics Letters, 1986
- Temperature dependence of bistable InGaAsP/InP lasersIEEE Journal of Quantum Electronics, 1986
- High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well LasersJapanese Journal of Applied Physics, 1985
- Quantum noise and dynamics in quantum well and quantum wire lasersApplied Physics Letters, 1984
- Gain and intervalence band absorption in quantum-well lasersIEEE Journal of Quantum Electronics, 1984
- Optical Absorption Characteristics of GaAs–AlGaAs Multi-Quantum-Well Heterostructure WaveguidesJapanese Journal of Applied Physics, 1983
- Bistability and pulsations in semiconductor lasers with inhomogeneous current injectionIEEE Journal of Quantum Electronics, 1982
- Bistable operation in semiconductor lasers with inhomogeneous excitationElectronics Letters, 1981
- Analysis of a proposed bistable injection laserSolid-State Electronics, 1964