Radiation susceptibility of a non-radiation-hard 1.2 μm CMOS transistors

This publication has 13 references indexed in Scilit:

• Study of device parameters for analog IC design in a 1.2 mu m CMOS-SOI technology after 10 Mrad (for hadron colliders)
  IEEE Transactions on Nuclear Science, 1992
• Noise measurement results of a radiation hardened CMOS 1.2 μm P-well process
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
• Effect of radiation-induced charge on 1/f noise in MOS devices
  IEEE Transactions on Nuclear Science, 1990
• Radiation damage of bipolar SST due to γ rays of 60Co
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
• Evidence that similar point defects cause 1/fnoise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors
  Physical Review Letters, 1990
• Integrated low-noise amplifiers in CMOS technology
  Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
• Radiation Hardness and Annealing Tests of a Custom VLSI Device
  IEEE Transactions on Nuclear Science, 1987
• Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors
  Applied Physics Letters, 1986
• Correlation of Radiation Effects in Transistors and Integrated Circuits
  IEEE Transactions on Nuclear Science, 1985
• Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
  IEEE Transactions on Electron Devices, 1980