Surface Tension Variation of Molten Silicon Measured by the Ring Method

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Abstract
The detailed temperature dependence of the surface tension of molten silicon was measured using an accurate ring method. The surface tension data obtained using a SiC-coated graphite crucible showed an approximately linear temperature dependence from 1,430° C to 1,650° C. Although the temperature dependence of the surface tension of molten silicon in a quartz glass crucible was similar to the above, the maximum value of the surface tension was about 20 dyn/cm smaller than that in the case of the SiC crucible. The temperature coefficient of the surface tension became positive at about 1,425° C and returned to a negative value just above the melring point. These results indicate that surface melt flow near the meniscus of a growing crystal tends to be opposite to the crystal.

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