Measurement of Relaxation in Strained Layer Semiconductor Structures
- 1 January 1989
- journal article
- Published by Cambridge University Press (CUP) in Advances in X-ray Analysis
- Vol. 33, 61-66
- https://doi.org/10.1154/s0376030800019431
Abstract
Many advanced semiconductor device designs require the growth of heteroepitaxial layers with lattice parameters differing by up to a few percent with respect to the substrate. X-ray diffraction offers a nondestructive method of determining the extent of relaxation. This paper discusses the sensitivity of x-ray techniques to small amounts of relaxation, describes how relaxation is measured in cubic materials for layer on (001) substrates and suggests nomenclature for the case of asymmetric relaxation.Keywords
This publication has 3 references indexed in Scilit:
- Estimation of percentage relaxation in Si/Si1-xGexstrained-layer superlatticesSemiconductor Science and Technology, 1989
- Dislocation Velocities in Indium PhosphideJapanese Journal of Applied Physics, 1981
- Calculated elastic constants for stress problems associated with semiconductor devicesJournal of Applied Physics, 1973