Extrinsic optical recombination in pentacene single crystals: Evidence of gap states
- 17 November 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (21) , 211117
- https://doi.org/10.1063/1.2135494
Abstract
Two luminescence bands observed in pentacene single crystals with different degrees of purity are identified as due to extrinsic optical emissions. A band at 1.49 eV remains in the crystal with the highest purity. Its redshift of about 0.3 eV from the free exciton optical recombination suggests that the extrinsic transitions could involve gap states recently discovered in pentacene transistors. Absence of resonance Raman scattering when photon energies overlap the extrinsic recombination suggests that the gap states are likely due to impurities. The temperature dependence of luminescence intensities is interpreted by activated decay of excitons to radiative and nonradiative states.Keywords
This publication has 14 references indexed in Scilit:
- Field electron emission of Si nanotips with apexes of various compositionsApplied Physics Letters, 2005
- Shallow trap states in pentacene thin films from molecular slidingApplied Physics Letters, 2005
- Influence of the dielectric roughness on the performance of pentacene transistorsApplied Physics Letters, 2004
- Bias-Dependent Generation and Quenching of Defects in PentacenePhysical Review Letters, 2004
- Stimulated terahertz emission from arsenic donors in siliconApplied Physics Letters, 2004
- Contact resistance in organic thin film transistorsApplied Physics Letters, 2004
- Identification of polymorphs of pentaceneSynthetic Metals, 2003
- High-mobility polymer gate dielectric pentacene thin film transistorsJournal of Applied Physics, 2002
- EXCITONIC PHOTOLUMINESCENCE IN PENTACENE SINGLE CRYSTALInternational Journal of Modern Physics B, 2001
- Temperature-independent transport in high-mobility pentacene transistorsApplied Physics Letters, 1998