Effect of AlAs Buffer Layers on Epitaxial Growth of GaAs on Si (100)
- 1 August 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (8A) , L1342
- https://doi.org/10.1143/jjap.29.l1342
Abstract
Dislocation density and full width at half maximum (FWHM) of X-ray diffraction of GaAs grown on Si substrates are reduced with thin AlAs buffer layers grown by migration-enhanced epitaxy. Reflection high-energy electron diffraction (RHEED) and Auger measurements indicate that this is attributable to the layerlike growth of AlAs. There is an optimum AlAs buffer layer thickness. The minimum etch pit density and the minimum FWHM of X-ray diffraction are obtained at the thickness of 35 monolayers of AlAs. They are 6×106 cm-2 and 183 arcsec, respectively.Keywords
This publication has 12 references indexed in Scilit:
- Initial stages of growth of GaAs on silicon (211) substrates by migration-enhanced molecular beam epitaxyApplied Physics Letters, 1989
- Initial stages of GaAs and AlAs growth on Si substrates: Atomic-layer epitaxyJournal of Vacuum Science & Technology B, 1989
- Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxyJournal of Crystal Growth, 1989
- Dislocation reduction by impurity diffusion in epitaxial GaAs grown on SiApplied Physics Letters, 1988
- Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1988
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1987
- Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam EpilaxyJapanese Journal of Applied Physics, 1987
- Effect of i n s i t u and e x s i t u annealing on dislocations in GaAs on Si substratesApplied Physics Letters, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986