Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- 1 February 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (2A) , L118
- https://doi.org/10.1143/jjap.22.l118
Abstract
Crystalline quality of Si films grown on CaF2/Si heteroepitaxial structures has been improved by solid phase recrystallization of ion implanted amorphous layers. Both the Si/CaF2/Si(100) and Si/CaF2/Si(111) structures were bombarded with P+ ions to amorphize the surface region of the top Si films, and subsequently annealed at temperatures of 550–750°C. It has been found from ion channeling measurements that the crystalline quality of the Si films on CaF2/Si(100) structures is significantly improved after recrystallization at 750°C, but the quality of the Si films on CaF2/Si(111) structures is not improved by this method.Keywords
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